The following figure shows the electron and hole currents along the position at the n-side of a PN junction. In the figure, the depletion width is very small and not observable.  Assume the diffusion coefficient and diffusion length for holes and electrons are the same (i.e. Dp=Dn and Lp=Ln).  Also take kT/q=0.025V, the n-side doping concentration is ND=1x1016cm-3 and the forward voltage is 0.5V in this problem.  Calculate the following (up to 3 significant digits if the answer is not a round number): 1) What is the hole current at the edge of n-side depletion region in mA? [Fill in the blank], mA 2) What is the p-side doping concentration of the PN junction? [Fill in the blank], cm-3 3) What is the new total diode current in mA if the n-side doping is increased by 10 times? [Fill in the blank], mA   多项填空题

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The current through a PN junction under illumination can be written as, Itotal = Idiode - Iphoto where Idiode is the current given by the ideal diode equation and Iphoto  is the optically generated current. When the PN junction is operated as a solar cell, which if the following statement is correct.

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