The effective density of states of a piece of silicon is 𝑁𝐶=2∗1019𝑐𝑚−3 in the conduction band at room temperature and it is doped with both NA and ND.  Assume the intrinsic carrier concentration 𝑛𝑖 is 1010𝑐𝑚−3 and ND=1*1017𝑐𝑚−3. Suppose 0.4% of the equivalent states in the conduction band are filled by electrons at room temperature. a) What is NA in the silicon per cm3?  [Fill in the blank], b) What is the electron concentration in the silicon per cm3?  [Fill in the blank], c) What is the hole concentration in the silicon per cm3?  [Fill in the blank], d) What is the value of the Fermi-Dirac function 𝐹𝑒(𝐸𝐶) at the conduction band edge?  [Fill in the blank], 多项填空题