The following figure shows the electron and hole currents along the position at the n-side of a PN junction. In the figure, the depletion width is very small and not observable. Assume the diffusion coefficient and diffusion length for holes and electrons are the same (i.e. Dp=Dn and Lp=Ln). Also take kT/q=0.025V, the n-side doping concentration is ND=1x1016cm-3 and the forward voltage is 0.5V in this problem. Calculate the following (up to 3 significant digits if the answer is not a round number): 1) What is the hole current at the edge of n-side depletion region in mA? [Fill in the blank], mA 2) What is the p-side doping concentration of the PN junction? [Fill in the blank], cm-3 3) What is the new total diode current in mA if the n-side doping is increased by 10 times? [Fill in the blank], mA Multiple fill-in-the-blank
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